翻訳と辞書 Words near each other ・ Lowell Catholic High School ・ Lowell Cauffiel ・ Lowell Caylor ・ Lowell Cemetery ・ Lowell City Airport ・ Lowell Connector ・ Lowell Corporation ・ Lowell Correctional Institution ・ Lowell Cowell ・ Lowell Creek Diversion Tunnel ・ Lowell Cunningham ・ Lowell D. Holmes Museum of Anthropology ・ Low-sulfur diet ・ Low-surface-brightness galaxy ・ Low-temperature cooking ・ Low-temperature polycrystalline silicon ・ Low-temperature thermal desalination ・ Low-temperature thermal desorption ・ Low-threshold spikes ・ Low-threshold treatment programs ・ Low-tide elevation ・ Low-value consignment relief ・ Low-velocity zone ・ Low-volatility anomaly ・ Low-voltage detect ・ Low-voltage differential signaling ・ Low-voltage electron microscope ・ Lowa Khatsa ・ Lowadeh ・ Lowake, Texas Dictionary Lists mini英和辞書 mini和英辞書 Webster 1913 Latin-English FOLDOC Wikipedia English ウィキペディア

翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Low-temperature polycrystalline silicon ： ウィキペディア英語版 Low-temperature polycrystalline silicon Low-temperature polycrystalline silicon (LTPS) is polycrystalline silicon that has been synthesized at relatively low temperatures (~650 °C and lower) compared to in traditional methods (above 900 °C). LTPS is important for display industries, since the use of large glass panels prohibits exposure to deformative high temperatures. More specifically, the use of polycrystalline silicon in thin-film transistors (LTPS-TFT) has high potential for large-scale production of electronic devices like flat panel displays or image sensors.〔Fonash, Stephen. "Low Temperature Crystallization and Patterning of Amorphous Silicon Film On Electrically Insulating Substrates." United States Patent (1994). Print.〕 == Development of polycrystalline silicon == Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice. In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness.〔Harbeke, G., L. Krausbauer, E.F. Steigmerier, and A.E. Widmer. "Growth and Physical Properties of LPCVD Polycrystalline Silicon Films." Journal of The Electrochemical Society (1984): 675. Print.〕 Silicon film is synthesized by low-pressure chemical vapor deposition (LPCVD) to minimize surface roughness. First, amorphous silicon is deposited at 560–640 °C. Then it is thermally annealed (recrystallized) at 950–1000 °C. Starting with the amorphous film, rather than directly depositing crystals, produces a product with a superior structure and a desired smoothness.〔Hatalis, Miltiadis K., and David W. Greve. "Large Grain Polycrystalline Silicon By Low-Temperature Annealing Of Low-Pressure Chemical Vapor Deposited Amorphous Silicon Films." Applied Physics 63.07 (1988): 2266. Print.〕〔Hatalis, M.K., and D.W. Greve. "High-Performance Thin-Film Transistors In Low-Temperature Crystallized LPCVD Amorphous Silicon Films." IEEE Electron Device Letters 08 (1987): 361–64. Print.〕 In 1988, researchers discovered that further lowering temperature during annealing, together with advanced plasma-enhanced chemical vapor deposition (PECVD),could facilitate even higher degrees of conductivity. These techniques have profoundly impacted the microelectronics, photovoltaic, and display enhancement industries. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Low-temperature polycrystalline silicon」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.